IGC27T120T8Q IGBT Transistor

The IGC27T120T8Q is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC27T120T8Q transistor as follows.

IGC27T120T8Q Transistor Specification

Transistor Code		IGC27T120T8Q
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.42V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		175 oC

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