IGC19T65QE IGBT Transistor

The IGC19T65QE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC19T65QE transistor as follows.

IGC19T65QE Transistor Specification

Transistor Code		IGC19T65QE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.32V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC

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