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IGC189T120T8RL IGBT Transistor

The IGC189T120T8RL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC189T120T8RL transistor as follows.

Circuit diagram symbol of the IGC189T120T8RL transistor

IGC189T120T8RL Transistor Specification

Transistor Code IGC189T120T8RL
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 175 oC

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