IGC168T170S8RH IGBT Transistor

The IGC168T170S8RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC168T170S8RH transistor as follows.

IGC168T170S8RH Transistor Specification

Transistor Code		IGC168T170S8RH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC

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