IGC13T120T6L IGBT Transistor

The IGC13T120T6L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC13T120T6L transistor as follows.

IGC13T120T6L Transistor Specification

Transistor Code		IGC13T120T6L
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		60

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