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IGC11T120T8L IGBT Transistor

The IGC11T120T8L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC11T120T8L transistor as follows.

Circuit diagram symbol of the IGC11T120T8L transistor

IGC11T120T8L Transistor Specification

Transistor Code IGC11T120T8L
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.07V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) 175 oC

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