IGC114T170S8RM IGBT Transistor

The IGC114T170S8RM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC114T170S8RM transistor as follows.

IGC114T170S8RM Transistor Specification

Transistor Code		IGC114T170S8RM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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