IGC10R60D IGBT Transistor

The IGC10R60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC10R60D transistor as follows.

IGC10R60D Transistor Specification

Transistor Code		IGC10R60D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		53

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