IGC100T65T8RM IGBT Transistor

The IGC100T65T8RM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC100T65T8RM transistor as follows.

IGC100T65T8RM Transistor Specification

Transistor Code		IGC100T65T8RM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.23V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		175 oC

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