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IGC06R60D IGBT Transistor

The IGC06R60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC06R60D transistor as follows.

Circuit diagram symbol of the IGC06R60D transistor

IGC06R60D Transistor Specification

Transistor Code IGC06R60D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 46

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