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IGB30N60T IGBT Transistor

The IGB30N60T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGB30N60T transistor as follows.

Circuit diagram symbol of the IGB30N60T transistor

IGB30N60T Transistor Specification

Transistor Code IGB30N60T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 187W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 108
Rise Time 21

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