IGB10N60T IGBT Transistor

The IGB10N60T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGB10N60T transistor as follows.

IGB10N60T Transistor Specification

Transistor Code		IGB10N60T
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK(TO263)
Collector Power Dissipation (Maximum)	Pc	110W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	20A

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