HYG30P120H1K1 IGBT Transistor

The HYG30P120H1K1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HYG30P120H1K1 transistor as follows.

HYG30P120H1K1 Transistor Specification

Transistor Code		HYG30P120H1K1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		40

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