HYG15P120B1K1 IGBT Transistor

The HYG15P120B1K1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HYG15P120B1K1 transistor as follows.

HYG15P120B1K1 Transistor Specification

Transistor Code		HYG15P120B1K1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	156W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		40

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