HIL40N120TF IGBT Transistor

The HIL40N120TF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HIL40N120TF transistor as follows.

HIL40N120TF Transistor Specification

Transistor Code		HIL40N120TF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	480W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		150
Rise Time		80

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