HIH20N60BP IGBT Transistor

The HIH20N60BP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HIH20N60BP transistor as follows.

HIH20N60BP Transistor Specification

Transistor Code		HIH20N60BP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	192W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		98
Rise Time		67

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