HIA30N60BP IGBT Transistor

The HIA30N60BP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HIA30N60BP transistor as follows.

HIA30N60BP Transistor Specification

Transistor Code		HIA30N60BP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		143
Rise Time		81

UXPython is not the creator or an official representative of the HIA30N60BP IGBT transistor. You can download the official HIA30N60BP IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

HGTP5N120BND IGBT Transistor GT60M302 IGBT Transistor SKM50GD063DL IGBT Transistor MMG40A120B7HN IGBT Transistor SGW15N120 IGBT Transistor IXGK35N120CD1 IGBT Transistor IXGR40N60B IGBT Transistor F3L150R07W2E3_B11 IGBT Transistor IXA40PG1200DHGLB IGBT Transistor IXSP20N60B2 IGBT Transistor MMG150S060B6EN IGBT Transistor FD-DF80R12W1H3_B52 IGBT Transistor STGP19NC60W IGBT Transistor APTGF50X60BTP3 IGBT Transistor IXBH14N300HV IGBT Transistor IXGT25N250 IGBT Transistor IRGC16B60KB IGBT Transistor MIXA151W1200EH IGBT Transistor FGH40N60SFD IGBT Transistor F12-35R12KT4G IGBT Transistor