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HGTP7N60A4 IGBT Transistor

The HGTP7N60A4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP7N60A4 transistor as follows.

Circuit diagram symbol of the HGTP7N60A4 transistor

HGTP7N60A4 Transistor Specification

Transistor Code HGTP7N60A4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector-Emitter Voltage (Maximum) VCE 600V
Operating Junction Temperature (Maximum) 150 oC

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