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HGTP5N120CND IGBT Transistor

The HGTP5N120CND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP5N120CND transistor as follows.

Circuit diagram symbol of the HGTP5N120CND transistor

HGTP5N120CND Transistor Specification

Transistor Code HGTP5N120CND
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 150 oC

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