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HGTP1N120BND IGBT Transistor

The HGTP1N120BND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP1N120BND transistor as follows.

Circuit diagram symbol of the HGTP1N120BND transistor

HGTP1N120BND Transistor Specification

Transistor Code HGTP1N120BND
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 5.3A
Operating Junction Temperature (Maximum) 150 oC

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