HGTP14N40F3VL IGBT Transistor

The HGTP14N40F3VL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP14N40F3VL transistor as follows.

HGTP14N40F3VL Transistor Specification

Transistor Code		HGTP14N40F3VL
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	83W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	10V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		16000

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