HGTP12N60D1 IGBT Transistor

The HGTP12N60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP12N60D1 transistor as follows.

HGTP12N60D1 Transistor Specification

Transistor Code		HGTP12N60D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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