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HGTP12N60B3D IGBT Transistor

The HGTP12N60B3D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP12N60B3D transistor as follows.

Circuit diagram symbol of the HGTP12N60B3D transistor

HGTP12N60B3D Transistor Specification

Transistor Code HGTP12N60B3D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 27A
Operating Junction Temperature (Maximum) 150 oC

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