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HGTP12N60A4D IGBT Transistor

The HGTP12N60A4D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP12N60A4D transistor as follows.

Circuit diagram symbol of the HGTP12N60A4D transistor

HGTP12N60A4D Transistor Specification

Transistor Code HGTP12N60A4D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 54A
Operating Junction Temperature (Maximum) 150 oC

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