HGTP12N40E1 IGBT Transistor

The HGTP12N40E1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP12N40E1 transistor as follows.

HGTP12N40E1 Transistor Specification

Transistor Code		HGTP12N40E1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		50

UXPython is not the creator or an official representative of the HGTP12N40E1 IGBT transistor. You can download the official HGTP12N40E1 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APTGF30X60BTP2 IGBT Transistor HGTP10N40E1D IGBT Transistor APTGT150SK120D3 IGBT Transistor SGL160N60UFD IGBT Transistor IXGH4N250C IGBT Transistor FF200R06YE3 IGBT Transistor GT20J321 IGBT Transistor IXSA10N60B2D1 IGBT Transistor FGH80N60FD IGBT Transistor TA9895 IGBT Transistor MMG100D120B6HN IGBT Transistor RJP4301APP-M0 IGBT Transistor 1MBH10D-120 IGBT Transistor IKW30N65NL5 IGBT Transistor IXYK120N120C3 IGBT Transistor IXBX75N170A IGBT Transistor AOK40B60D IGBT Transistor VS-70MT060WSP IGBT Transistor APT30GP60BDF1 IGBT Transistor IXGH16N170 IGBT Transistor