HGTP10N50E1 IGBT Transistor

The HGTP10N50E1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP10N50E1 transistor as follows.

HGTP10N50E1 Transistor Specification

Transistor Code		HGTP10N50E1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		50

UXPython is not the creator or an official representative of the HGTP10N50E1 IGBT transistor. You can download the official HGTP10N50E1 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

FGA15N120FTD IGBT Transistor MMG75W120XB6TN IGBT Transistor IXGA15N120B IGBT Transistor APT45GP120B2DQ2G IGBT Transistor APT80GA90LD40 IGBT Transistor VS-GA100TS120UPBF IGBT Transistor APT40GR120B IGBT Transistor IXXK110N60B4H1 IGBT Transistor SGW5N60RUF IGBT Transistor APT100GT120JU3 IGBT Transistor RJH60F7ADPK IGBT Transistor MMG400D170B6EN IGBT Transistor G10N40 IGBT Transistor HGTP12N60B3 IGBT Transistor SKM22GD123D IGBT Transistor MMG200DR060B IGBT Transistor HGT1S12N60C3DRS IGBT Transistor FGW50N60HD(50G60HD) IGBT Transistor MID145-12A3 IGBT Transistor IXGK35N120CD1 IGBT Transistor