HGTP10N50E1 IGBT Transistor

The HGTP10N50E1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP10N50E1 transistor as follows.

HGTP10N50E1 Transistor Specification

Transistor Code		HGTP10N50E1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		50

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