The HGTP10N40E1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the HGTP10N40E1 transistor as follows.
| Transistor Code | HGTP10N40E1 | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | TO220 | |
| Collector Power Dissipation (Maximum) | Pc | 60W |
| Collector-Emitter Voltage (Maximum) | VCE | 400V |
| Gate-Emitter Voltage (Maximum) | VGE | 20V |
| Collector-Emitter Saturation Voltage | VCE(on) | 4.5V |
| Collector Current (Maximum) | IC | 10A |
| Operating Junction Temperature (Maximum) | 175 oC | |
| Rise Time | 50 | |
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