HGTP10N120BN IGBT Transistor

The HGTP10N120BN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP10N120BN transistor as follows.

HGTP10N120BN Transistor Specification

Transistor Code		HGTP10N120BN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC

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