HGTM12N40E1 IGBT Transistor

The HGTM12N40E1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTM12N40E1 transistor as follows.

HGTM12N40E1 Transistor Specification

Transistor Code		HGTM12N40E1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO204
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		50

UXPython is not the creator or an official representative of the HGTM12N40E1 IGBT transistor. You can download the official HGTM12N40E1 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

HGTP20N60C3 IGBT Transistor AOTF5B60D IGBT Transistor FGH40N60SFD IGBT Transistor APTGT200U120D4 IGBT Transistor STGW30H60DLFB IGBT Transistor IRG4BC10UD IGBT Transistor FF150R12KT3G IGBT Transistor AOK60B60D1 IGBT Transistor STGP6NC60HD IGBT Transistor APT50GT120B2RDLG IGBT Transistor SGH10N120RUFD IGBT Transistor HGT1S20N35G3VL IGBT Transistor IXBN42N170A IGBT Transistor IRG4BC40S IGBT Transistor MMG100S060B6N IGBT Transistor IXST15N120BD1 IGBT Transistor RGT60TS65D IGBT Transistor SGS23N60UF IGBT Transistor IKB15N60T IGBT Transistor MIAA10WF600TMH IGBT Transistor