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HGTG7N60A4D IGBT Transistor

The HGTG7N60A4D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG7N60A4D transistor as follows.

Circuit diagram symbol of the HGTG7N60A4D transistor

HGTG7N60A4D Transistor Specification

Transistor Code HGTG7N60A4D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Operating Junction Temperature (Maximum) 150 oC

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