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HGTG30N60C3 IGBT Transistor

The HGTG30N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG30N60C3 transistor as follows.

Circuit diagram symbol of the HGTG30N60C3 transistor

HGTG30N60C3 Transistor Specification

Transistor Code HGTG30N60C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 208W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 63A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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