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HGTG30N60B3 IGBT Transistor

The HGTG30N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG30N60B3 transistor as follows.

Circuit diagram symbol of the HGTG30N60B3 transistor

HGTG30N60B3 Transistor Specification

Transistor Code HGTG30N60B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC

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