HGTG30N120CN IGBT Transistor

The HGTG30N120CN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG30N120CN transistor as follows.

HGTG30N120CN Transistor Specification

Transistor Code		HGTG30N120CN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC

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