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HGTG30N120CN IGBT Transistor

The HGTG30N120CN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG30N120CN transistor as follows.

Circuit diagram symbol of the HGTG30N120CN transistor

HGTG30N120CN Transistor Specification

Transistor Code HGTG30N120CN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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