HGTG27N60C3DR IGBT Transistor

The HGTG27N60C3DR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG27N60C3DR transistor as follows.

HGTG27N60C3DR Transistor Specification

Transistor Code		HGTG27N60C3DR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	54A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		38

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