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HGTG11N120CND IGBT Transistor

The HGTG11N120CND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG11N120CND transistor as follows.

Circuit diagram symbol of the HGTG11N120CND transistor

HGTG11N120CND Transistor Specification

Transistor Code HGTG11N120CND
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 43A
Operating Junction Temperature (Maximum) 150 oC

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