HGTG10N120BND IGBT Transistor

The HGTG10N120BND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG10N120BND transistor as follows.

HGTG10N120BND Transistor Specification

Transistor Code		HGTG10N120BND
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC

UXPython is not the creator or an official representative of the HGTG10N120BND IGBT transistor. You can download the official HGTG10N120BND IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMG300WB170B6EN IGBT Transistor APT20GT60BR IGBT Transistor HGTD7N60B3 IGBT Transistor FGH30N120FTD IGBT Transistor IXDP20N60B IGBT Transistor SMBH1G75US60 IGBT Transistor STGP10NB60SD IGBT Transistor HGTH12N50C1D IGBT Transistor APTGF90X60E3 IGBT Transistor TA49051 IGBT Transistor APT40GT60BRG IGBT Transistor STGWA30N120KD IGBT Transistor IRG7PH46UD IGBT Transistor IXYH60N90C3 IGBT Transistor APT20GT60BRG IGBT Transistor IXGH60N60B2 IGBT Transistor IXBF28N300 IGBT Transistor IXA40RG1200DHGLB IGBT Transistor IQIB150N60B3 IGBT Transistor APTGT35H120T3 IGBT Transistor