HGTD6N50E1S IGBT Transistor

The HGTD6N50E1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD6N50E1S transistor as follows.

HGTD6N50E1S Transistor Specification

Transistor Code		HGTD6N50E1S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		90

UXPython is not the creator or an official representative of the HGTD6N50E1S IGBT transistor. You can download the official HGTD6N50E1S IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMG75H120X6TN IGBT Transistor AUIRGP65G40D0 IGBT Transistor FF200R33KF2C IGBT Transistor IXYK120N120B3 IGBT Transistor IXXH50N60B3 IGBT Transistor IRG4BC15UD-S IGBT Transistor HGTD10N40F1 IGBT Transistor MGW20N60D IGBT Transistor IGC70T120T8RQ IGBT Transistor IXGP30N120B3 IGBT Transistor MMG25H120X6TN IGBT Transistor IKD10N60RF IGBT Transistor MMG100D120B6HN IGBT Transistor GT5J301 IGBT Transistor APT13GP120BDQ1G IGBT Transistor IRGB4064D IGBT Transistor KE703A IGBT Transistor IXBH42N170A IGBT Transistor IXGT28N90B IGBT Transistor APT20GT60KR IGBT Transistor