HGTD6N50E1S IGBT Transistor

The HGTD6N50E1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD6N50E1S transistor as follows.

HGTD6N50E1S Transistor Specification

Transistor Code		HGTD6N50E1S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		90

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