HGTD3N60C3S9A IGBT Transistor

The HGTD3N60C3S9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD3N60C3S9A transistor as follows.

HGTD3N60C3S9A Transistor Specification

Transistor Code		HGTD3N60C3S9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	33W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		5

UXPython is not the creator or an official representative of the HGTD3N60C3S9A IGBT transistor. You can download the official HGTD3N60C3S9A IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGH22N170 IGBT Transistor MWI50-12E6K IGBT Transistor APT30GT60CR IGBT Transistor MMG300D170B6EN IGBT Transistor RJP4007ANS IGBT Transistor IXGT28N60B IGBT Transistor IRGP35B60PD-E IGBT Transistor APT150GN60JDQ4 IGBT Transistor NTE3311 IGBT Transistor MII300-12A4 IGBT Transistor IRG4BC15UD-L IGBT Transistor NGTB20N120IHSWG IGBT Transistor IRGS15B60KD IGBT Transistor FF300R07ME4_B11 IGBT Transistor FGY75N60SMD IGBT Transistor FD650R17IE4D_B2 IGBT Transistor NGTB30N60S IGBT Transistor APT75GN60BDQ2G IGBT Transistor BSM100GD60DLC IGBT Transistor NGTB50N65FL2WG IGBT Transistor