HGTD3N60C3S9A IGBT Transistor

The HGTD3N60C3S9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD3N60C3S9A transistor as follows.

HGTD3N60C3S9A Transistor Specification

Transistor Code		HGTD3N60C3S9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	33W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		5

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