HGTD10N50F1S9A IGBT Transistor

The HGTD10N50F1S9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD10N50F1S9A transistor as follows.

HGTD10N50F1S9A Transistor Specification

Transistor Code		HGTD10N50F1S9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		45

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