HGTD10N40F1S IGBT Transistor

The HGTD10N40F1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD10N40F1S transistor as follows.

HGTD10N40F1S Transistor Specification

Transistor Code		HGTD10N40F1S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		45

UXPython is not the creator or an official representative of the HGTD10N40F1S IGBT transistor. You can download the official HGTD10N40F1S IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APTGT30A170D1 IGBT Transistor IGW60T120 IGBT Transistor IXGM25N100 IGBT Transistor IRG4BC20FD IGBT Transistor SM2G100US60 IGBT Transistor IXGA4N100 IGBT Transistor IXYX120N120B3 IGBT Transistor NGTB20N135IHRWG IGBT Transistor IGC18T120T8L IGBT Transistor IXGF20N300 IGBT Transistor IXXR110N65B4H1 IGBT Transistor IXGX35N120BD1 IGBT Transistor IXGK60N60 IGBT Transistor SMBH1G150US120 IGBT Transistor GT50M101 IGBT Transistor APT60GU30B IGBT Transistor APT30GT60BR IGBT Transistor SHD724402 IGBT Transistor 1MB30-060 IGBT Transistor IXSH24N60AU1 IGBT Transistor