HGT1S7N60C3DS IGBT Transistor

The HGT1S7N60C3DS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S7N60C3DS transistor as follows.

HGT1S7N60C3DS Transistor Specification

Transistor Code		HGT1S7N60C3DS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263AB
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		8.5

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