HGT1S7N60C3D IGBT Transistor

The HGT1S7N60C3D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S7N60C3D transistor as follows.

HGT1S7N60C3D Transistor Specification

Transistor Code		HGT1S7N60C3D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262AA
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		8.5

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