HGT1S7N60B3S IGBT Transistor

The HGT1S7N60B3S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S7N60B3S transistor as follows.

HGT1S7N60B3S Transistor Specification

Transistor Code		HGT1S7N60B3S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC

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