HGT1S7N60A4DS IGBT Transistor

The HGT1S7N60A4DS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S7N60A4DS transistor as follows.

HGT1S7N60A4DS Transistor Specification

Transistor Code		HGT1S7N60A4DS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	600V
Operating Junction Temperature (Maximum)		150 oC

UXPython is not the creator or an official representative of the HGT1S7N60A4DS IGBT transistor. You can download the official HGT1S7N60A4DS IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

HGT1S12N60C3D IGBT Transistor FGW35N60HC(35G60HC) IGBT Transistor IKW40N65F5 IGBT Transistor MMG100S120B6HN IGBT Transistor KGF30N135NDH IGBT Transistor SKM200GAL123DKLD110 IGBT Transistor RJH60F4DPK IGBT Transistor IXBH20N160 IGBT Transistor MMIX1X340N65B4 IGBT Transistor SKM400GA174D IGBT Transistor IGC100T65T8RM IGBT Transistor APTGT50TA170P IGBT Transistor G10N50E1 IGBT Transistor FF1400R17IP4 IGBT Transistor APT75GN60BDQ2G IGBT Transistor IRG4PSC71KD IGBT Transistor IXGK72N60B3H1 IGBT Transistor IXGH36N60B3D1 IGBT Transistor STGFW30NC60V IGBT Transistor GT30J311 IGBT Transistor