HGT1S2N120CNS IGBT Transistor

The HGT1S2N120CNS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S2N120CNS transistor as follows.

HGT1S2N120CNS Transistor Specification

Transistor Code		HGT1S2N120CNS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262AB
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	13A
Operating Junction Temperature (Maximum)		150 oC

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