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HGT1S2N120CNDS IGBT Transistor

The HGT1S2N120CNDS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S2N120CNDS transistor as follows.

Circuit diagram symbol of the HGT1S2N120CNDS transistor

HGT1S2N120CNDS Transistor Specification

Transistor Code HGT1S2N120CNDS
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO262AB
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 13A
Operating Junction Temperature (Maximum) 150 oC

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