HGT1S2N120BNDS IGBT Transistor

The HGT1S2N120BNDS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S2N120BNDS transistor as follows.

HGT1S2N120BNDS Transistor Specification

Transistor Code		HGT1S2N120BNDS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262AB
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC

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