HGT1S20N60C3RS9A IGBT Transistor

The HGT1S20N60C3RS9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S20N60C3RS9A transistor as follows.

HGT1S20N60C3RS9A Transistor Specification

Transistor Code		HGT1S20N60C3RS9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262AB
Collector Power Dissipation (Maximum)	Pc	164W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		34

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