The HGT1S12N60C3DS9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the HGT1S12N60C3DS9A transistor as follows.
| Transistor Code | HGT1S12N60C3DS9A | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | TO263AB | |
| Collector Power Dissipation (Maximum) | Pc | 104W |
| Collector-Emitter Voltage (Maximum) | VCE | 600V |
| Gate-Emitter Voltage (Maximum) | VGE | 20V |
| Collector-Emitter Saturation Voltage | VCE(on) | 1.65V |
| Collector Current (Maximum) | IC | 24A |
| Operating Junction Temperature (Maximum) | 150 oC | |
| Rise Time | 28 | |
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