HGT1S12N60C3DS9A IGBT Transistor

The HGT1S12N60C3DS9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S12N60C3DS9A transistor as follows.

HGT1S12N60C3DS9A Transistor Specification

Transistor Code		HGT1S12N60C3DS9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263AB
Collector Power Dissipation (Maximum)	Pc	104W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		28

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