HGT1S12N60B3DS IGBT Transistor

The HGT1S12N60B3DS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S12N60B3DS transistor as follows.

HGT1S12N60B3DS Transistor Specification

Transistor Code		HGT1S12N60B3DS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	27A
Operating Junction Temperature (Maximum)		150 oC

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